?guangdong hottech industrial co.,ltd e-mail:hkt@h eketai.com 1 / 4 HABT2222(npn) replacement type : mmbt2222 features ? genernal purpose amplifier maximum ratings (t a = 25c unless otherwise noted) electrical characteristics (t a = 25c unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =10a,i e =0 75 v collector-emitter breakdown voltage v ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v ebo i e =10ua,i c =0 6 v collector cut-off current i cbo v cb =60v,i e =0 10 na collector cut-off current i cex v ce =30v,v be (off)=3v 10 na emitter cut-off current i ebo v eb =3v,i c =0 0.1 a dc current gain h fe(1) v ce =10v,i c =150ma 100 300 h fe(2) v ce =10v,i c =0.1ma 40 h fe(3) v ce =10v,i c =500ma 42 collector-emitter saturation voltage v ce(sat)1 i c =500ma,i b =50ma 1 v v ce(sat)2 i c =150ma,i b =15ma 0.3 v base-emitter saturation voltage v be(sat) i c =500 ma,i b =50ma 1.2 v transition frequency f t v ce =20v,i c =-20ma,f=100mhz 300 mhz delay time t d v cc =30v,v be(off) =-0.5v i c =150ma,i b1 = 15ma 10 ns rise time t r 25 ns storage time ts v cc =30v, i c =150ma i b1 =i b2 =15ma 225 ns fall time t f 60 ns classification of h fe rank l h range 100-200 200-300 parameter symbol value unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 6 v collector current-continuous i c 600 ma collector power dissipation p c 250 mw r ja 500 c /w junction temperature t j 150 c storage temperature t stg -55 to +150 c sot-23 marking: m1b therma l resistance junction to ambient 1: base 2:e mitter 3: collector switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HABT2222(npn) typical characteristics 0.1 1 10 1 10 100 0.1 1 10 100 0 100 200 300 400 500 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 0 25 50 75 100 125 150 0 100 200 300 400 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 024681 01 2 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 0.0 0.4 0.8 1.2 f=1mhz i e =0/ i c =0 t a =25 20 v cb / v eb c ob / c ib c ob c ib capacitance c (pf) reverse voltage v (v) common emitter v ce =10v 600 i c t a =25 t a =100 dc current gain h fe collector current i c (ma) 100 10 v be i c common emitter v ce =10v 600 t a =100 t a =25 collector current i c (ma) base-emmiter voltage v be (v) p c t a collector power dissipation pc (mw) ambient temperature ta ( ) h fe 600 =10 t a =100 t a =25 i c v cesat collector-emitter saturation voltage v cesat (v) collector current i c (ma) static characteristic 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma i b =0.1ma common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 600 =10 i c v besat t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (ma) 80 500 i c f t common emitter v ce =20v f=200mhz ta=25 transtion frequency f t (mhz) collector current i c (ma) switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HABT2222(npn) sot-23 package outline dimensions dimensions in millimeters dimensions in inches symbol min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e 0.950 ty p 0.037 ty p e1 1.800 2.000 0.071 0.079 l 0.550 r e f 0.022 r e f l1 0.300 0.500 0.012 0.020 0 8 0 8 switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HABT2222(npn) sot-23 embossed carrier tape sot-23 tape leader and traller sot-23 reel dimensions are in millimeter reel option d d1 d2 g h i w1 w2 7 dia 178 54.40 13.00 r78 r25.60 r6.50 9.50 12.3 0 tolerance 2 1 1 1 1 1 1 1 dimensions are in millimeter type a b c d e f p0 p p1 w sot-23 3.15 2.77 1.22 1.50 1.75 3.50 4.00 4.00 2.0 0 8.00 tolerance 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 switching transistor
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